PART |
Description |
Maker |
LTC6403IUD-1TRPBF |
200MHz, Low Noise, Low Power Fully Differential Input/Output Amplier/Driver; Package: QFN; No of Pins: 16; Temperature Range: -40°C to 85°C OP-AMP, 1500 uV OFFSET-MAX, 200 MHz BAND WIDTH, PQCC16
|
Linear Technology, Corp.
|
2SB1132 2SB1132L-X-TN3-T 2SB1132L-P-AB3-R 2SB1132L |
MEDIUM POWER TRANSISTOR 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252 MEDIUM POWER TRANSISTOR 中功率晶体管
|
??『绉???′唤?????? UNISONIC TECHNOLOGIES CO LTD Unisonic Technologies Co., Ltd. 友顺科技股份有限公司 UTC[Unisonic Technologies]
|
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC ROHM[Rohm]
|
CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
BC51-16PA BC51-10PA BCP51-10 BC51PA |
45 V, 1A PNP medium power transistors 45伏,1安PNP型中等功率晶体管 Si, POWER TRANSISTOR 45 V, 1 A PNP medium power transistors
|
NXP Semiconductors N.V.
|
CR12CM-12A CR12CM-12A-A8 CR12CM-12A-13 CR12CM-12A- |
Thyristor Medium Power Use 600V - 12A - Thyristor Medium Power Use
|
Renesas Electronics Corporation
|
STX817 |
PNP MEDIUM POWER TRANSISTOR NPN MEDIUM POWER TRANSISTOR
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
LMA443 |
31GHz Medium Power Amplifier 31 GHz Medium Power Amplifier
|
FILTRONIC[Filtronic Compound Semiconductors]
|
MPS-A05 MPS-A55 MPS-A56 MPS-A06 |
COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS COMPLEMENTRAY SILICON AF MEDIUM POWER TRANSISTORS
|
MICRO-ELECTRONICS[Micro Electronics]
|
HMC441 HMC440QS16G HMC441LM1 |
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER/ 7.0 - 15.5 GHz HBT DIGITAL PHASE-FREQUENCY DETECTOR/ 10 - 1300 MHz/ w/ INTEGRATED 5-BIT COUNTER/ 10 - 2800 MHz 800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.0 - 18.0 GHz
|
美国讯泰微波有限公司上海代表 HITTITE[Hittite Microwave Corporation]
|
SF16JZ51 SF16GZ51 |
MEDIUM POWER CONTROL APPLICATIONS THYRISTOR SILICON PLANAR TYPE MEDIUM POWER CONTROL APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|